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Samsung Starts Producing First 512GB Universal Flash Storage

Samsung Starts Producing First 512GB Universal Flash Storage

Samsung says this is particularly noteworthy, given that its 512GB eUFS solution contains twice the number of cells as its 256GB eUFS solution. Using UFS proved to be the right decision for Samsung, as it achieved much better performance than eMMC, which was predominantly used by Android phones at the time. This year, flagships have moved to the UFS 2.1 standard which brings even higher storage performance.

It was nearly two years ago that Samsung announced that it was kicking off mass-production of 256GB storage chips implementing the Universal Flash Storage (UFS) 2.0 interface boasting speeds of up to 850MB/s for sequential reads and 260MB/s for writes. To account for the growing storage needs in mobile, Samsung has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next generation smartphones and tablets. It has built 64-layer 512 gigabit chips.

The new solution is also really fast, allowing users to "store approximately 130 [10 minute] 4K Ultra HD video clips", a feat that might make the experience very sluggish on current storage solutions.

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Samsung also injected its 512GB eUFS solution with a new of proprietary technologies, including an advanced circuit design and new power management technology in the controller to minimize energy consumption.

On the performance side of things, the 512GB chip has read speeds that max out at 860MB/s and write speeds of 255MB/s. The 512 GB chip stacks eight of the aforementioned NAND dies and is speced for up to 860 MB/s sequential read speeds as well as up to 255 MB/s sequential write speeds, which is in line with the company's 256 GB eUFS device launched in 2016. To transfer a 5GB Full HD video clip to an SSD, it'd take just six seconds (eight times faster than what most microSD cards are capable of). This will improve the speed of storage-intensive tasks such as high-resolution burst photos, file searches, and downloading videos in dual app mode, the company states.

Samsung on Tuesday announced that it had initiated volume production of UFS NAND flash memory chips with 512 GB capacity based on its latest 64-layer 512 Gb V-NAND.